Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
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چکیده
منابع مشابه
Technology focus: GaN HEMTs
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
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AlGaN/GaN high electron mobility transistors (HEMTs) are favored for the use in high-power and highfrequency applications. Normally-off operation has been desired for various applications, but proved to be difficult to achieve. Recently, a new approach was proposed by Mizutani et al. [Mizutani T, Ito M, Kishimoto S, Nakamura F. AlGaN/GaN HEMTs with thin InGaN cap layer for normally-off operatio...
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Several novel high-performance GaN-based devices have been recently proposed. InAlN/GaN high electron mobility transistors (HEMTs) provide higher polarization charges without the drawback of high strain and demonstrate maximum current capabilities surpassing those of AlGaN/GaN structures [1]. We shall discuss the models of the material system [2], implemented in our twodimensional device simula...
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.......................................................................................................................................... 5 KURZZUSAMMENFASSUNG ........................................................................................................... 6 INTRODUCTION.....................................................................................................................
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In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...
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تاریخ انتشار 2011