Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier
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چکیده
منابع مشابه
Technology focus: GaN HEMTs
has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
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